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1 metal-gate MOS
МОП-структура с металлическими затворамиБольшой англо-русский и русско-английский словарь > metal-gate MOS
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2 metal-gate MOS
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3 metal-gate MOS
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4 metal-gate MOS device
Электроника: МОП-прибор с металлическим затвором -
5 metal-gate MOS transistor
Микроэлектроника: МОП-транзистор с металлическим затворомУниверсальный англо-русский словарь > metal-gate MOS transistor
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6 metal-gate (MOS) process
технологія МОН ІС з металевими затворамиEnglish-Ukrainian dictionary of microelectronics > metal-gate (MOS) process
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7 metal-gate MOS transistor
МОН-транзистор з металевим затворомEnglish-Ukrainian dictionary of microelectronics > metal-gate MOS transistor
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8 metal-gate (MOS) process
технологія МОН ІС з металевими затворамиEnglish-Ukrainian dictionary of microelectronics > metal-gate (MOS) process
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9 metal-gate MOS transistor
English-Russian dictionary of microelectronics > metal-gate MOS transistor
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10 metal-gate mos device
English-Russian dictionary of electronics > metal-gate mos device
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11 thick-oxide metal gate MOS circuit
nELECTRON circuito de SOM con puerta de metal de óxido espeso mEnglish-Spanish technical dictionary > thick-oxide metal gate MOS circuit
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12 self-aligned gate metal-oxide-semiconductore self-aligned gate MOS
Универсальный англо-русский словарь > self-aligned gate metal-oxide-semiconductore self-aligned gate MOS
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13 MOS
I сокр. от mean opinion score II сокр. от metal-oxide-semiconductorструктура (типа) металл - оксид - полупроводник, МОП-структура-
adjustable-threshold MOS
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aluminum-gate MOS
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back-gate MOS
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beam-addressed MOS
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bipolar MOS
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bulk complementary MOS
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buried channel MOS
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buried-oxide MOS
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clocked complementary MOS
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complementary MOS
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depletion MOS
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dielectric insulated MOS
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dielectric isolated MOS
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diffusion self-aligned MOS
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double polysilicon MOS
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double poly MOS
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double-diffused MOS
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double-implanted MOS
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dynamic complementary MOS
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enhancement MOS
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enhancement/depletion MOS
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floating-gate avalanche injection MOS
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floating-gate MOS
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high-density MOS
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high-performance complementery MOS
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high-threshold MOS
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high-voltage MOS
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insulated gate MOS
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ion-implanted MOS
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isolated gate MOS
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junction gate MOS
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lateral planar MOS
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local oxidation MOS
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long MOS
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low-threshold MOS
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metal-gate MOS
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micrometer MOS
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micron MOS
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n-channel MOS
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p-channel MOS
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polysilicon self-aligned MOS
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poly self-aligned MOS
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power MOS
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quadruple self-aligned MOS
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refractory MOS
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resistive-gate MOS
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scaled-down MOS
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scaled MOS
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Schottky-barrier MOS
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self-aligned MOS
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silicon-gate technology MOS
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silicon-gate MOS
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silicon-on-sapphire complementary MOS
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stacked transistors complementary MOS
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submicrometer MOS
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submicron MOS
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surface gate MOS
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three-dimensional MOS
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transverse MOS
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triple-polysilicon MOS
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triple-poly MOS
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V-groove MOS
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V MOS -
14 gate
1) логический элемент, ЛЭ; (логическая) схема; проф. вентиль; шлюз || управлять (напр. работой устройства) с помощью логических элементов или логических схем; использовать логические элементы или логические схемы2) селекторный импульс, стробирующий импульс, строб-импульс || осуществлять селекцию во времени; стробировать4) затвор (напр. полевого транзистора)5) пп управляющий электрод (напр. тиристора)•to gate in — вводить ( сигнал)
to gate out — выделять ( сигнал)
- gate A20- alternative denial gate
- amplitude gate
- AND gate
- AND-INVERT gate
- AND-NOT gate
- anode gate
- back gate
- biconditional gate
- binary-logic gate
- bottom gate
- burst gate
- call gate
- capacitor-resistor-diode gate
- cathode gate
- clocked gate
- CML gate
- coincidence gate
- complement gate
- conjunction gate
- control gate
- CRD gate
- current-field-access swap gate
- current-mode gate
- current-mode logic gate
- difference gate
- diode gate
- diode-transistor logic gate
- discrete gate
- disjunction gate
- dispersion gate
- diversity gate
- DTL gate
- dual gate
- EITHER-OR gate
- emitter-coupled gate
- enabling gate
- equality gate
- equivalence gate
- equivalent gate
- except gate
- exclusive NOR gate
- exclusive OR gate
- fault-free gate
- faulty gate
- ferroelectric light gate
- film gate
- floating gate
- flux gate
- GaAs logic gate
- guard gate
- IC logic gate
- identity gate
- if-A-then-NOT-B gate
- I2L gate
- in gate
- inclusive NOR gate
- inclusive OR gate
- indicator gate
- information gate
- inhibition gate
- input gate
- insulated gate
- integrated injection logic gate
- interrupt gate
- inverting logic gate
- joint denial gate
- Josephson logic gate
- Josephson-junction logic gate
- junction gate
- latching Boolean gate
- logic gate
- logical gate
- magnetic gate
- majority gate
- match gate
- meshed gate
- metal gate
- metal-oxide-semiconductor gate
- mix gate
- molibdenum gate
- MOS gate
- multiemitter gate
- multiple-level gate
- multiple-level logic gate
- NAND gate
- n-channel silicon gate
- negation gate
- negative AND -gate
- negative OR gate
- negative unate gate
- NEITHER-NOR gate
- N-input gate
- nitride gate
- NMOS silicon gate
- noise gate
- nonconjunction gate
- nondisjunction gate
- nonequality gate
- nonequivalence gate
- nonunate gate
- NOR gate
- NOT gate
- NOT-AND gate
- one-nanosecond gate
- opaque gate
- optical gate
- OR gate
- OTHER-OR gate
- out gate
- outer gate
- overlapping gates
- p-channel silicon gate
- PMOS silicon gate
- p-n junction gate
- polysilicon gate
- positive unate gate
- primitive logic gate
- pulse gate
- range gate
- readout gate
- refractory gate
- replicate gate
- resistive insulated gate
- resistively connected gates
- resistor-transistor logic gate
- RTL gate
- sampling gate
- scan gate
- sealed gate
- searching gate
- self-aligned gate
- self-registered gate
- Shottky gate
- Shottky-barrier gate
- silicon gate
- stacked gate
- stated gate
- stateful gate
- stateless gate
- storage gate
- substrate gate
- swap gate
- synchronous gate
- task gate
- threshold gate
- thyratron gate
- time gate
- T2L gate
- top gate
- transfer gate
- transistor-transistor logic gate
- trap gate
- TTL gate
- tunneling cryotron gate
- variable-threshold gate
- V-groove MOS gate
- video gate
- VMOS gate
- write gate
- XNOR gate
- XOR gate
- zero-match gate -
15 gate
1) логический элемент, ЛЭ; (логическая) схема; проф. вентиль; шлюз || управлять (напр. работой устройства) с помощью логических элементов или логических схем; использовать логические элементы или логические схемы2) селекторный импульс, стробирующий импульс, строб-импульс || осуществлять селекцию во времени; стробировать4) затвор (напр. полевого транзистора)5) пп. управляющий электрод (напр. тиристора)•to gate in — вводить ( сигнал)
- amplitude gateto gate out — выделять ( сигнал), to gate through пропускать ( сигнал)
- AND gate
- AND-INVERT gate
- AND-NOT gate
- anode gate
- back gate
- biconditional gate
- binary-logic gate
- bottom gate
- burst gate
- call gate
- capacitor-resistor-diode gate
- cathode gate
- clocked gate
- CML gate
- coincidence gate
- complement gate
- conjunction gate
- control gate
- CRD gate
- current-field-access swap gate
- current-mode gate
- current-mode logic gate
- difference gate
- diode gate
- diode-transistor logic gate
- discrete gate
- disjunction gate
- dispersion gate
- diversity gate
- DTL gate
- dual gate
- EITHER-OR gate
- emitter-coupled gate
- enabling gate
- equality gate
- equivalence gate
- equivalent gate
- except gate
- exclusive NOR gate
- exclusive OR gate
- fault-free gate
- faulty gate
- ferroelectric light gate
- film gate
- floating gate
- flux gate
- GaAs logic gate
- gate A20
- guard gate
- I2L gate
- IC logic gate
- identity gate
- if-A-then-NOT-B gate
- in gate
- inclusive NOR gate
- inclusive OR gate
- indicator gate
- information gate
- inhibition gate
- input gate
- insulated gate
- integrated injection logic gate
- interrupt gate
- inverting logic gate
- joint denial gate
- Josephson logic gate
- Josephson-junction logic gate
- junction gate
- latching Boolean gate
- logic gate
- logical gate
- magnetic gate
- majority gate
- match gate
- meshed gate
- metal gate
- metal-oxide-semiconductor gate
- mix gate
- molibdenum gate
- MOS gate
- multiemitter gate
- multiple-level gate
- multiple-level logic gate
- NAND gate
- n-channel silicon gate
- negation gate
- negative AND-gate
- negative OR gate
- negative unate gate
- NEITHER-NOR gate
- N-input gate
- nitride gate
- NMOS silicon gate
- noise gate
- nonconjunction gate
- nondisjunction gate
- nonequality gate
- nonequivalence gate
- nonunate gate
- NOR gate
- NOT gate
- NOT-AND gate
- one-nanosecond gate
- opaque gate
- optical gate
- OR gate
- OTHER-OR gate
- out gate
- outer gate
- overlapping gates
- p-channel silicon gate
- PMOS silicon gate
- p-n junction gate
- polysilicon gate
- positive unate gate
- primitive logic gate
- pulse gate
- range gate
- readout gate
- refractory gate
- replicate gate
- resistive insulated gate
- resistively connected gates
- resistor-transistor logic gate
- RTL gate
- sampling gate
- scan gate
- sealed gate
- searching gate
- self-aligned gate
- self-registered gate
- Shottky gate
- Shottky-barrier gate
- silicon gate
- stacked gate
- stated gate
- stateful gate
- stateless gate
- storage gate
- substrate gate
- swap gate
- synchronous gate
- T2L gate
- task gate
- threshold gate
- thyratron gate
- time gate
- top gate
- transfer gate
- transistor-transistor logic gate
- trap gate
- TTL gate
- tunneling cryotron gate
- variable-threshold gate
- V-groove MOS gate
- video gate
- VMOS gate
- write gate
- XNOR gate
- XOR gate
- zero-match gateThe New English-Russian Dictionary of Radio-electronics > gate
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16 gate
1. ім.1)логічний елемент; вентиль; логічна схема2) затвор (напр. польового транзистора); керуючий електрод3) пост; робоче місце4) селекторний [стробуючий] імпульс, строб-імпульс2. дієсл. здійснювати селекцію в часі, стробувати - AND gate
- AND–NOR gate
- AND-NOT gate
- AND-OR gate
- back gate
- Boolean gate
- channelless sea gates
- closed-geometry gate
- coincidence gate
- control gate
- digital logic gate
- digital summation threshold logic gate
- discrete gate
- doped polysilicon gate
- double-input gate
- DSTL gate
- emitter-coupled logic gate
- emitter-coupled gate
- equivalent gate
- erase gate
- exclusive NOR gate
- exclusive OR gate
- expandable gate
- fan-in gate
- fan-out gate
- fault-free gate
- faulty gate
- finger gate
- floating gate
- functional gate
- IIL gate
- I2L gate
- imaging gate
- inclusive OR gate
- inspectation gate
- intrinsic gate
- inverting gate
- isolated gate
- Josephson-junction logic gate
- Josephson logic gate
- Josephson tunneling logic gate
- logic gate
- majority gate
- meander gate
- MOS gate
- MOSFET gate
- multiple-level logic gate
- multiple-level gate
- NAND gate
- negation gate
- negative gate
- negative AND gate
- nitride gate
- NOR gate
- NOT gate
- n+ poly gate
- offset gate
- OR gate
- OR–NOT gate
- polycrystalline silicon gate
- polysilicon gate
- process control gate
- QA gate
- quantum interference Joseph-son gate
- recessed gate
- refractory-metal gate
- replicate/annihilate gate
- resistive gate
- Scholtky-barriergate
- Scholtkygate
- Scholtky TTL gate
- sea gates
- self-aligned gate
- self-registered gate
- single-input gate
- single -logic level gate
- single level gate
- single-poly gate
- stacked gate
- storage gate
- transfer gate
- transistor gate
- variable threshold logic gate
- variable threshold gate
- V-groove MOS gate
- p-gate -
17 MOS
1 abbrCOMP&DP (metal-oxide semiconductor), ELECTRON (metallic oxide semiconductor) SOM (semiconductor metal-óxido)2 -
18 MOS
1) [mean opinion score] оценка качества передачи речи2) [metal-oxide semiconductor] структура металл-оксид-полупроводник, МОП-структура3) [metal-oxide-silicon] структура металл-оксид-кремний•- bi MOS- bipolar MOS
- C-MOS
- complementary MOS
- D-MOS
- double-diffusion MOS
- dual-injection MOS
- FA MOS
- floating-gate avalanche injection MOS
- high-density MOS
- high-performance MOS
- high-speed MOS
- n MOS
- n-channel MOS
- p MOS
- p-channel MOS
- V-MOS
- V-groove MOS -
19 MOS
1) сокр. от mean opinion score оценка качества передачи речи2) сокр. от metal-oxide semiconductor структура металл-оксид-полупроводник, МОП-структура- bi MOS- bipolar MOS
- C MOS
- complementary MOS
- D MOS
- double-diffusion MOS
- dual-injection MOS
- FA MOS
- floating-gate avalanche-injection MOS
- high-density MOS
- high-performance MOS
- high-speed MOS
- n MOS
- n-channel MOS
- p MOS
- p-channel MOS
- V-groove MOS- V-MOS3) сокр. от metal-oxide-silicon структура металл-оксид-кремнийThe New English-Russian Dictionary of Radio-electronics > MOS
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20 metal-oxide semiconductor
English-Spanish technical dictionary > metal-oxide semiconductor
См. также в других словарях:
metal-gate MOS transistor — MOP tranzistorius su metaline užtūra statusas T sritis radioelektronika atitikmenys: angl. metal gate MOS transistor vok. Metall Gate MOS Transistor, m rus. МОП транзистор с металлическим затвором, m pranc. transistor MOS à grille métallique, m … Radioelektronikos terminų žodynas
metal-gate MOS technique — MOP darinių su metalinėmis užtūromis technologija statusas T sritis radioelektronika atitikmenys: angl. metal gate MOS technique vok. Metallgate MOS Technik, f rus. технология МОП структур с металлическими затворами, f pranc. technologie de… … Radioelektronikos terminų žodynas
refractory-metal gate MOS structure — MOP darinys su sunkialydžio metalo užtūra statusas T sritis radioelektronika atitikmenys: angl. refractory MOS; refractory metal gate MOS structure vok. MOS Struktur mit dem Gate aus schwerschmelzendem Metall, f; Refractory MOS Struktur, f rus.… … Radioelektronikos terminų žodynas
Metal gate — A metal gate, in the context of a lateral Metal Oxide Semiconductor MOS stack, is just that the gate material is made from a metal. For decades, the industry had moved away from metal as the gate material in the MOS stack due to fabrication… … Wikipedia
Metall-Gate-MOS-Transistor — MOP tranzistorius su metaline užtūra statusas T sritis radioelektronika atitikmenys: angl. metal gate MOS transistor vok. Metall Gate MOS Transistor, m rus. МОП транзистор с металлическим затвором, m pranc. transistor MOS à grille métallique, m … Radioelektronikos terminų žodynas
MOS-Struktur mit dem Gate aus schwerschmelzendem Metall — MOP darinys su sunkialydžio metalo užtūra statusas T sritis radioelektronika atitikmenys: angl. refractory MOS; refractory metal gate MOS structure vok. MOS Struktur mit dem Gate aus schwerschmelzendem Metall, f; Refractory MOS Struktur, f rus.… … Radioelektronikos terminų žodynas
structure MOS à grille à la base de métal réfractaire — MOP darinys su sunkialydžio metalo užtūra statusas T sritis radioelektronika atitikmenys: angl. refractory MOS; refractory metal gate MOS structure vok. MOS Struktur mit dem Gate aus schwerschmelzendem Metall, f; Refractory MOS Struktur, f rus.… … Radioelektronikos terminų žodynas
Refractory-MOS-Struktur — MOP darinys su sunkialydžio metalo užtūra statusas T sritis radioelektronika atitikmenys: angl. refractory MOS; refractory metal gate MOS structure vok. MOS Struktur mit dem Gate aus schwerschmelzendem Metall, f; Refractory MOS Struktur, f rus.… … Radioelektronikos terminų žodynas
refractory MOS — MOP darinys su sunkialydžio metalo užtūra statusas T sritis radioelektronika atitikmenys: angl. refractory MOS; refractory metal gate MOS structure vok. MOS Struktur mit dem Gate aus schwerschmelzendem Metall, f; Refractory MOS Struktur, f rus.… … Radioelektronikos terminų žodynas
MOS Technology — MOS Technology, Inc., также известная как CSG (Commodore Semiconductor Group) американская компания, разработчик и производитель микросхем. Располагалась в Норристоне, штат Пенсильвания. Наиболее известна как разработчик микропроцессора… … Википедия
transistor MOS à grille métallique — MOP tranzistorius su metaline užtūra statusas T sritis radioelektronika atitikmenys: angl. metal gate MOS transistor vok. Metall Gate MOS Transistor, m rus. МОП транзистор с металлическим затвором, m pranc. transistor MOS à grille métallique, m … Radioelektronikos terminų žodynas
